IRF7555PBF mosfet equivalent, power mosfet.
C 0.33 BASIC
E .116 .120
2.95 3.05
H .188 .198 4.78 5.03
L .016 .026
0.41 0.66
θ 0° 6° 0° 6°
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1.04 ( .041 )
8X
(
0.38 .015
)
8X
3.20 ( ..
HEXFET® Power MOSFET
1 8 D1 2 7 D1 3 6 D2 4 5 D2
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VDSS = -20V RDS(on) = 0.055Ω
The new Micro8™ package has .
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well .
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