IRF7507PBF Datasheet, International Rectifier

N-Ch P-Ch VDSS 20V -20V RDS(on) 0.135Ω 0.27Ω The new Micro8 package, with half the footprint area of the standard SO-.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power.