900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRF7450PBF Datasheet

Power MOSFET

No Preview Available !

SMPS MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
PD- 95306
IRF7450PbF
HEXFET® Power MOSFET
RDS(on) max
ID
0.17W@VGS = 10V 2.5A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
S
l Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
2.5
2.0
20
2.5
0.02
± 30
11
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/12/04
Free Datasheet http://www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

IRF7450PBF Datasheet

Power MOSFET

No Preview Available !

IRF7450PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
0.17
5.5
25
250
100
-100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ƒ
VGS = 10V, ID = 1.5A ƒ
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
2.6 ––– –––
––– 26 39
––– 6.0 9.0
––– 12 18
––– 10 –––
––– 3.0 –––
––– 17 –––
––– 18 –––
––– 940 –––
––– 160 –––
––– 33 –––
––– 1100 –––
––– 66 –––
––– 25 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 1.5A
ID = 1.5A
VDS = 160V
VGS = 10V,
VDD = 100V
ID = 1.5A
RG = 6.0
VGS = 10V ƒ
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
Typ.
–––
–––
Max.
230
2.5
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
97
350
Max.
2.3
20
1.3
146
525
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.5A, VGS = 0V ƒ
TJ = 25°C, IF = 1.5A
di/dt = 100A/µs ƒ
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number IRF7450PBF
Description Power MOSFET
Maker International Rectifier
PDF Download

IRF7450PBF Datasheet PDF






Similar Datasheet

1 IRF7450PBF Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy