IRF7450PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
0.17
5.5
25
250
100
-100
V
V/°C
Ω
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 1.5A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
2.6 ––– –––
––– 26 39
––– 6.0 9.0
––– 12 18
––– 10 –––
––– 3.0 –––
––– 17 –––
––– 18 –––
––– 940 –––
––– 160 –––
––– 33 –––
––– 1100 –––
––– 66 –––
––– 25 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 1.5A
ID = 1.5A
VDS = 160V
VGS = 10V,
VDD = 100V
ID = 1.5A
RG = 6.0Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Typ.
–––
–––
Max.
230
2.5
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
97
350
Max.
2.3
20
1.3
146
525
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.5A, VGS = 0V
TJ = 25°C, IF = 1.5A
di/dt = 100A/µs
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