IRF7328PBF mosfet equivalent, power mosfet.
out notice. This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kans.
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
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SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @.
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well .
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