IRF7314QPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96107A IRF7314QPbF Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax •.

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IRF7314QPBF power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF7314QPBF
Manufacturer	International Rectifier (now Infineon)
File Size	241.18 KB
Description	Power MOSFET
Download	IRF7314QPBF Download (PDF)

General Description

These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Key Features

of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

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