IRF7314QPBF
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
S1 G1 S2 G2
HEXFET® Power MOSFET VDSS
-20V
RDS(on) max
0.058@VGS = -4.5V 0.098@VGS = -2.7V
-5.2A -4.42A
1 2 3 4
8 7
D1 D1 D2 D2
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA =...
