IRF7204PBF mosfet equivalent, power mosfet.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability.
HEXFET® Power MOSFET
S1 S2
8
A D
7D
VDSS = -20V
S3 G4
6 D RDS(on) = 0.060Ω
5D
Top View
ID = -5.3A
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance pe.
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