of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make t.

VDSS 50V HEXFET® Power MOSFET RDS(on) max (mW) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.5A S1 1 G1 2 S2 3 G2 4 8 D1.

This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast .

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