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IRF6898MTRPBF - Power MOSFET

Download the IRF6898MTRPBF datasheet PDF. This datasheet also covers the IRF6898MPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 10 T J = 150°C T J = 25°C T J = -40°C VGS = 0V 1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 225 200 175 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6898MPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6898MTRPbF Power MOSFET Infineon
IRF6898M Power MOSFET Infineon
IRF6898MPbF Power MOSFET Infineon
IRF6894MPbF Power MOSFET Infineon
IRF6894MTRPbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6898MPBF Power MOSFET
IRF6892STR1PBF Power MOSFET
IRF6892STRPBF Power MOSFET
IRF6893MPbF MOSFET
IRF6893MTRPbF MOSFET

Full PDF Text Transcription

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HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested IRF6898MPbF IRF6898MTRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS 25V max VGS ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V Qg tot Q gd 15nC Qgs2 4.7nC Qrr 66nC Q oss 43nC Vgs(th) 1.6V 41nC S D G S D MX Applicable DirectFET Outline and Substrate Outline (see p.
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