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IRF6898MPBF - Power MOSFET

Description

The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 10 T J = 150°C T J = 25°C T J = -40°C VGS = 0V 1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 225 200 175 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T.

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Full PDF Text Transcription

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HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested IRF6898MPbF IRF6898MTRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS 25V max VGS ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V Qg tot Q gd 15nC Qgs2 4.7nC Qrr 66nC Q oss 43nC Vgs(th) 1.6V 41nC S D G S D MX Applicable DirectFET Outline and Substrate Outline (see p.
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