IRF6646TRPbF datasheet, mosfet equivalent, International Rectifier

Features and benefits

100 10 6.0V TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 100 10 6.0V TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 1 0.1 ≤60µs PULSE WIDTH Tj = 25°C 1 10 100 VDS, Drain-to-Sour.

Application

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.

Description

The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package .

Image gallery