Datasheet4U Logo Datasheet4U.com

IRF6636TRPBF - Power MOSFET

Download the IRF6636TRPBF datasheet PDF. This datasheet also covers the IRF6636PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • .01 0.10 1.00 10.00 100.00 Fig 10. Typical Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 120 EAS , Single Pulse Avalanche Energy (mJ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6636PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6636 DirectFET Power MOSFET
IRF6636PBF Power MOSFET
IRF6631 DirectFET Power MOSFET
IRF6631PBF Power MOSFET
IRF6631TRPBF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.1nC RDS(on) Qgs2 1.9nC RDS(on) Qoss 10nC 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Qrr 7.3nC Vgs(th) 1.8V 18nC ST Applicable DirectFET Outline and Substrate Outline (see p.
Published: |