IRF6619TRPbF mosfet equivalent, directfet power mosfet.
.8V 2.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V ≤ 60µs PULSE WIDTH Tj = 25°C
≤ 60µs PULSE WIDTH.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package.
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