IRF6614 mosfet equivalent, directfet power mosfet.
t (A)
100
BOTTOM
10
BOTTOM
1
10
2.3V
0.1
≤ 60µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100
2.3V
1 0.1 1
≤ 60µs PULSE WIDTH Tj = 150°C
10 100
VDS , Drain-to-Source .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package .
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