IRF5803D2PbF diode equivalent, power mosfet & schottky diode.
. Typical Vgs(th) Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
www.irf.com
7
IRF5803D2PbF
Schottky Diode Characteristics
100
100 T J = 150°C Reverse Curre.
P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free
FETKY MOSFET & Schottky Diode
A A S G
1 8
TM
K K.
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely .
Image gallery
TAGS
Manufacturer
Related datasheet