IRF530NPbF mosfet equivalent, hexfet power mosfet.
Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance
Current Transformer
-
-
*+
RG
VGS
* dv/dt co.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 173.51KB)