l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description .

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.

IRF4104

IRF4104GPbF

IRF4104L

IRF4104LPbF

IRF4104S

IRF4104SPbF

IRF4000

IRF40B207

IRF40N03

IRF40R207

IRF40SC240

IRF420

IRF421

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