Datasheet Details
| Part number | IRF3808SPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 352.86 KB |
| Description | AUTOMOTIVE MOSFET |
| Datasheet |
 IRF3808SPBF Datasheet
|
|
|
General Description
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
Key Features
- of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.