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IRF3808LPBF - AUTOMOTIVE MOSFET

Download the IRF3808LPBF datasheet PDF. This datasheet also covers the IRF3808SPBF variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3808SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3808L N-Channel MOSFET INCHANGE
IRF3808 N-Channel MOSFET INCHANGE
IRF3808S N-Channel MOSFET INCHANGE
IRF3808S N-Channel MOSFET Kexin
IRF3805 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF3808L Power MOSFET
IRF3808 Power MOSFET
IRF3808PBF Power MOSFET
IRF3808S Power MOSFET
IRF3808SPBF AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE MOSFET Typical Applications ● ● ● IRF3808SPbF IRF3808LPbF D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.007Ω S Benefits ● ● ● ● ● ● G ID = 106A† Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.