IRF3805S-7PPbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description .
HEXFET® Power MOSFET D VDSS = 55V
G RDS(on) = 2.6mΩ
S
S (Pin 2, 3, 5, 6, 7) G (Pin 1)
ID = 160A
D2Pak 7 Pin IRF38.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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