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IRF3805S-7PPbF Datasheet, International Rectifier

IRF3805S-7PPbF mosfet equivalent, power mosfet.

IRF3805S-7PPbF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 347.00KB)

IRF3805S-7PPbF Datasheet

Features and benefits

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description .

Application

HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 2.6mΩ‰ S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID = 160A D2Pak 7 Pin IRF38.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

Image gallery

IRF3805S-7PPbF Page 1 IRF3805S-7PPbF Page 2 IRF3805S-7PPbF Page 3

TAGS

IRF3805S-7PPbF
Power
MOSFET
International Rectifier

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