2V .2µF .3µF D.U.T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF2807PbF Peak Diode Recovery dv/dt Test Ci.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to .

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRF2807

IRF2807L

IRF2807LPbF

IRF2807S

IRF2807SPbF

IRF2807Z

IRF2807ZL

IRF2807ZLPBF

IRF2807ZPBF

IRF2807ZS

IRF2807ZSPBF

IRF2804

IRF2804L

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