IRF2804S-7PPbF datasheet, mosfet equivalent, International Rectifier

Features and benefits

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description .

Application

IRF2804S-7PPbF HEXFET® Power MOSFET D VDSS = 40V G S S (Pin 2, 3 ,5,6,7) G (Pin 1) RDS(on) = 1.6mΩ ID = 160A Absol.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

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