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International Rectifier Electronic Components Datasheet

IRF1010EZSPBF Datasheet

POWER MOSFET

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Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
PD - 95483C
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
G RDS(on) = 8.5m
S ID = 75A
TO-220AB
D2Pak
TO-262
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
84
60
75
340
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/06/10


International Rectifier Electronic Components Datasheet

IRF1010EZSPBF Datasheet

POWER MOSFET

No Preview Available !

IRF1010EZ/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60
–––
–––
2.0
–––
0.058
6.8
–––
–––
–––
8.5
4.0
V
V/°C
m
V
VGS = 0V, ID = 250µA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
VDS = VGS, ID = 100µA
gfs
Forward Transconductance
200 ––– ––– S VDS = 25V, ID = 51A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 58 86 nC ID = 51A
Qgs Gate-to-Source Charge
––– 19 28
VDS = 48V
fQgd
Gate-to-Drain ("Miller") Charge
––– 21 32
VGS = 10V
td(on)
Turn-On Delay Time
––– 19 ––– ns VDD = 30V
tr Rise Time
––– 90 –––
ID = 51A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 38 –––
––– 54 –––
fRG = 7.95
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2810 –––
––– 420 –––
––– 200 –––
––– 1440 –––
––– 320 –––
––– 510 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 84
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 340
––– ––– 1.3
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 51A, VGS = 0V
trr Reverse Recovery Time
––– 41 62
ns TJ = 25°C, IF = 51A, VDD = 30V
fQrr Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
… Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH, † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25, IAS = 51A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
‡ This value determined from sample failure population. 100%
ƒ ISD 51A, di/dt 260A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2 www.irf.com


Part Number IRF1010EZSPBF
Description POWER MOSFET
Maker International Rectifier
Total Page 12 Pages
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