IRF1010EZSPBF - POWER MOSFET

International Rectifier

IRF1010EZSPBF Datasheet Preview — Preview of IRF1010EZSPBF PDF

Datasheet Details

Part number	IRF1010EZSPBF
Manufacturer	International Rectifier ↗
File Size	404.58 KB
Description	POWER MOSFET
Datasheet	IRF1010EZSPBF_InternationalRectifier.pdf

IRF1010EZSPBF Product details

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S.

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Published: Aug 29, 2010 |