Datasheet4U Logo Datasheet4U.com

IRF1010EZSPBF - POWER MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S.

📥 Download Datasheet

Datasheet preview – IRF1010EZSPBF

📁 Similar Datasheet

  • IRF1010EZS - N-Channel MOSFET (INCHANGE)
  • IRF1010EZ - N-Channel MOSFET (INCHANGE)
  • IRF1010E - N-Channel MOSFET (INCHANGE)
  • IRF1010ES - N-Channel MOSFET (INCHANGE)
  • IRF1010 - N-Channel Power MOSFET (nELL)
  • IRF1010N - N-Channel MOSFET (INCHANGE)
  • IRF1010NS - N-Channel MOSFET (INCHANGE)
  • IRF1010ZS - N-Channel MOSFET (INCHANGE)
  • IRF101 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF1018E - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Published: |