Datasheet4U Logo Datasheet4U.com

HFA140NJ60C - HEXFRED Ultrafast/ Soft Recovery Diode

Description

HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.

An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.

Features

  • • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFA1405 Video Operational Amplifier Renesas
HFA1412 Programmable Gain Buffer Amplifier Renesas
HFA100 Multicontact Auxiliary Relays GE
HFA10N90Z N-Channel MOSFET SemiHow
HFA1100 Low Distortion Current Feedback Operational Amplifier Renesas

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
HFA140NJ60D Soft Recovery Diode
HFA140NH60 Soft Recovery Diode
HFA140NH60R soft recovery diode
HFA140MD60C Soft Recovery Diode
HFA140MD60D Soft Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -2.458 rev. B 02/99 HFA140NJ60C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 600V V F(typ.)ƒ = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC IRRM(typ.) = 8.5A trr(typ.) = 33ns di(rec)M/dt (typ.)ƒ = 220A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications.
Published: |