GP30B120KD-EP transistor equivalent, insulated gate bipolar transistor.
* Low VCE(on) Non Punch Through (NPT) Technology
* Low Diode VF (1.76V Typical @ 25A & 25°C)
* 10 μs Short Circuit Capability
* Square RBSOA
* Ultraso.
* Rugged Transient Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Shari.
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