G7S313U igbt equivalent, igbt.
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.35
V
circuits in PDP applic.
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C TJ max
160
A
150
°C
.
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are.
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