* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
* IGBT c.

20 0 V TJ = 125°C TJ = 25°C 1000 IF = 120A IF = 60A IF = 30A 0 100 1000 dif /dt - (A/µs) Fig. 16 - Typical Stored .

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