Click to expand full text
PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
n-cha nn el
Benefits
• Generation -4 IGBT's offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs .
G4BC30UD Datasheet
