Full PDF Text Transcription for G4BC30FD (Reference)
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G4BC30FD. For precise diagrams, and layout, please refer to the original PDF.
PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard...
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C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in E n-channel bridge configurations • Industry standard TO-220AB package Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
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G4BC30FD Datasheet
