Datasheet Summary
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PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220AB package
Short Circuit Rated UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A n-ch an nel
Benefits
- Latest generation 4 IGBTs offer highest power...