F9Z34NL Datasheet IRF9Z34NL

Manufacturer: International Rectifier (now Infineon)

F9Z34NL irf9z34nl by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	F9Z34NL
Manufacturer	International Rectifier (now Infineon)
File Size	178.38 KB
Description	IRF9Z34NL
Datasheet	F9Z34NL Datasheet

General Description

l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This www.DataSheet4U.com benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Overview

PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche.

Key Features

tline 10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 www. DataSheet4U. com 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M 0.55 (.022) 0.46 (.018).

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