QGD VGS .3µF D.U.T. +VDS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRF9Z24N www.DataS.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

l l D G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d.

F9Z34NL

F9Z34NS

F900B

F900BJ

F900BJ-ALxxE

F9020

F91AZ050SC

F91SM

F9221L

F9222L

F9223L-F219

F9232

F930E107MBA

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