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F7751 - IRF7751

Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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www.DataSheet4U.com PD - 94002 IRF7751 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -30V RDS(on) max 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V ID -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2 signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8.
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