t Circuit 200 0 V D D = 25 V 25 50 75 100 125 150 A 175 V (B R )D SS tp S tarting T J , J unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy Vs. Drain .

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

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