AUIRL7736M2TR mosfet equivalent, power mosfet.
of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust.
* Exceptionally Small Footprint and Low Profile
* High Power Density
* Low Parasitic Parameters
* Dual S.
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm p.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 239.82KB)