l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5m.

this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per s.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating t.

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