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AUIRL1404ZS - Power MOSFETs

Download the AUIRL1404ZS datasheet PDF. This datasheet also covers the AUIRL1404Z variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

processing techniques to achieve extremely low onresistance per silicon area.

Features

  • l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 180A l Automotive Qualified.
  • S ID (Package Limited) 160A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRL1404Z-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRL1404ZS Power MOSFET Infineon
AUIRL1404Z Power MOSFET Infineon
AUIRL1404ZL Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon
AUIRL1404S Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRL1404Z Power MOSFETs
AUIRL1404ZL Power MOSFETs
AUIRL1404L Power MOSFET
AUIRL1404S Power MOSFET
AUIRL3705Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 180A l Automotive Qualified * S ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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