Low VCE(on) Trench IGBT Technology Low Switching losses 5 µs Short Circuit Capability Square RBSOA and 100% Clamp IL Tested Tight parameter distribution Lead-Free, RoHS C.

*  HEV Inverter G E n-channel Features Low VCE(on) Trench IGBT Technology Low Switching losses 5 µs Short Circuit .

AUIRG4BC30S-S

AUIRG4BC30S-SL

AUIRG4BC30U-S

AUIRG4BC30U-SL

AUIRG4PC40S-E

AUIRG4PH50S

AUIRG7CH80K6B-M

AUIRGB4062D1

AUIRGDC0250

AUIRGF65G40D0

AUIRGF66524D0

AUIRGP35B60PD

AUIRGP35B60PD-E

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