l l l l l l l l AUIRFS3206 AUIRFSL3206 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Te.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts