AUIRFS4310Z datasheet, mosfet equivalent, International Rectifier

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 267.21KB)

Features and benefits

* Advanced Process Technology
* Ultra Low On-Resistance
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanc.

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

Image gallery