AUIRFR3710Z Datasheet | International Rectifier

- 97451 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - D V(BR)DSS RDS(on) max. ID (Silicon Limited) 100V 18mΩ 56A 42A ID (Package Limited) .. Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak AUIRFR3710Z Gate Drain Source...