AUIRFR3710Z
Overview
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
- V(BR)DSS RDS(on) max. ID (Silicon Limited) 100V 18mΩ 56A 42A G S ID (Package Limited)
