Datasheet Summary
- 97451
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- D
V(BR)DSS RDS(on) max. ID (Silicon Limited)
100V 18mΩ 56A 42A
ID (Package Limited)
..
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved...
