AUIRFL024N mosfet equivalent, power mosfet.
* Advanced Planar Technology
* Low On-Resistance
* Dynamic dV/dT Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
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