AUIRF9952Q mosfet equivalent, power mosfet.
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Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalan.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
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