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AUIRF7739L2TR1 - N-Channel MOSFET

Download the AUIRF7739L2TR1 datasheet PDF. This datasheet also covers the AUIRF7739L2TR variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF7739L2TR_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free AUIRF7739L2TR AUIRF7739L2TR1 V(BR)DSS RDS(on) typ. max.