AUIRF7737L2TR1 mosfet equivalent, power mosfet.
of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust.
* Exceptionally Small Footprint and Low Profile
* High Power Density
* Low Parasitic Parameters
* Dual S.
The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profi.
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