AUIRF7736M2TR1, AUIRF7736M2TR Datasheet - International Rectifier

AUIRF7736M2TR1 Power MOSFET

The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with e.

PD - 96316B AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and AUIRF7736M2TR AUIRF7736M2TR1 40V 2.5mΩ 3.0mΩ 108A 72nC other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability .

AUIRF7736M2TR1 Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Stresses beyond those listed under “Absol

AUIRF7736M2TR-InternationalRectifier.pdf