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AUIRF7665S2TR1 - N-Channel MOSFET

Download the AUIRF7665S2TR1 datasheet PDF. This datasheet also covers the AUIRF7665S2TR variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

Key Features

  • combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C www. DataSheet4U. com ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Package Li.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF7665S2TR_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7665S2TR Power MOSFET Infineon
AUIRF7665S2 Power MOSFET Infineon
AUIRF7669L2TR Power MOSFET Infineon
AUIRF7640S2TR Power MOSFET Infineon
AUIRF7647S2TR Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF7665S2TR N-Channel MOSFET
AUIRF7669L2TR Automotive DirectFET Power MOSFET
AUIRF7669L2TR1 Automotive DirectFET Power MOSFET
AUIRF7640S2TR DirectFET Power MOSFET
AUIRF7640S2TR1 DirectFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96286 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7665S2TR AUIRF7665S2TR1 DirectFET™ Power MOSFET ‚ V(BR)DSS 100V RDS(on) typ. 51mΩ max. 62mΩ RG (typical) 3.5Ω Qg (typical) 8.