l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S VD.

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

AUIRF6215

AUIRF6218L

AUIRF6218S

AUIRF1010EZ

AUIRF1010EZL

AUIRF1010EZS

AUIRF1010Z

AUIRF1010ZL

AUIRF1010ZS

AUIRF1324

AUIRF1324L

AUIRF1324S

AUIRF1324S-7P

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