AUIRF3710ZS mosfet equivalent, power mosfet.
O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automo.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
www.DataSheetS4pUe.ccoifmically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction.
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