AUIRF3315S Datasheet, International Rectifier

l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating HEXFET® Power MOSFET D AUIRF3315S 150V 82m 21A 175°C Operating Temperature Fast Switc.

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.