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AUIRF2804S - Power MOSFET

Download the AUIRF2804S datasheet PDF. This datasheet also covers the AUIRF2804 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF2804_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF2804S Power MOSFET Infineon
AUIRF2804 Power MOSFET Infineon
AUIRF2804L Power MOSFET Infineon
AUIRF2903ZL Power MOSFET Infineon
AUIRF2903ZS Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF2804S-7P Power MOSFET
AUIRF2804 Power MOSFET
AUIRF2804L Power MOSFET
AUIRF2805 Power MOSFET
AUIRF2805L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .