AUIRF2804S-7P datasheet, mosfet equivalent, International Rectifier

Features and benefits

l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Te.

Application

this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-res.

Description

Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junctio.

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